Nanostructured h-WO₃-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality

Iontronic devices link ion-based transport with established electronic systems. Emerging capacitive devices, like CAPode and G-Cap, feature diode-like rectification and transistor-like switching, respectively, through electrochemical capacitor functionality for enhanced energy storage and signal processing in next-generation low-power electronics. In this study, we present an asymmetric architecture based on nanostructured hexagonal tungsten oxide with significantly enhanced current rectification (with a rectification ratio of 58) providing an efficient ionic transistor with 97.5% switching efficiency under only 1 V bias. Key parameters, such as substrate materials, the mass ratio of counter electrode to working electrode, electrolyte composition and concentration are evaluated to reach the highest rectification ratios.