DFTB parameters for the Periodic Table: part III, Spin-Orbit Coupling

10 June 2022, Version 2
This content is a preprint and has not undergone peer review at the time of posting.

Abstract

Spin-orbit coupling (SOC) is crucially important for the correct description of the electronic structure and transport properties of inorganic semiconductors, and for assessing topological properties as in topological insulators. We present a consistent set of SOC parameters for the density-functional based tight-binding (DFTB) method covering the elements throughout the periodic table. The parameters are based on atomic SOC data calculated at the level of density- functional theory (DFT). We tested these parameters for representative systems with significant SOC, including transition metal dichalcogenide two-dimensional crystals, III-V bulk semiconductors, and topological insulators. Our parameterization opens the door for DFTB- based electronic structure and transport calculations of very large systems, such as twisted van der Waals heterostructures.

Keywords

Density Functional Tight Binding
Spin-Orbit Coupling
Transition Metal Dichalcogenides 2D crystals
Topological Insulators
III-V 3D Semiconductors

Supplementary materials

Title
Description
Actions
Title
Supporting Information
Description
The respective file contains the spin-orbit coupling parameters along with the lattice parameters as well as optimised geometries.
Actions

Supplementary weblinks

Comments

Comments are not moderated before they are posted, but they can be removed by the site moderators if they are found to be in contravention of our Commenting Policy [opens in a new tab] - please read this policy before you post. Comments should be used for scholarly discussion of the content in question. You can find more information about how to use the commenting feature here [opens in a new tab] .
This site is protected by reCAPTCHA and the Google Privacy Policy [opens in a new tab] and Terms of Service [opens in a new tab] apply.