Abstract
In this study, we measured the recombination emission from the CT state under different applied voltage in the OSC device and a photocurrent density flowing on the circuit simultaneously. By the experiment, we extracted only the information of CT state emission at the interface and proposed `PL-V plot` that is the voltage dependence of PL intensity of the CT state. The PL-V plot includes the information only from the radiative recombination at donor/acceptor interface, and is complementary to the `J-V plot` that is the most important information for evaluating OSCs. The result demonstrated that the fill factor of PL-V plot is definitely higher than that of J-V plot because the PL-V plot observes the CT state recombination only at the D/A interface, predicting the ideal FF of the device.