Abstract
Our study provides significant new results
for an important interface in current and future nanoelectronics, namely the
Graphene-ZnO interface. The manuscript includes the results of intensive
density functional calculations for the interface between several ZnO surfaces and
a single layer graphene. The structural properties and the binding energies at
the interface are calculated for three different ZnO surfaces. The Zn-terminated
(0001) and O-terminated (000-1) surfaces as well as nonpolar (10-10) surface
are considered in the present study. We also investigate the electronic
properties of the contact by calculating the interfacial potential barrier
based on projected density of states at different layers. The results indicate the
crucial role of interfacial oxygen density on the electronic behavior of the
contact, which in turn can be employed to explain experimental discrepancies on
the Ohmic or Schottky behavior of this interface. Calculations for interfaces
with oxygen vacancies support our finding and explain experimental results for
thermally treated samples.